HK UPPERBOND INDUSTRIAL LIMITED
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| Place of Origin: | China |
| Brand Name: | Upperbond |
| Certification: | CE, ISO |
| Model Number: | Maker |
| Minimum Order Quantity: | 2 pcs |
|---|---|
| Price: | Negotiable |
| Packaging Details: | Carton |
| Delivery Time: | 5-8 days |
| Supply Ability: | 10000 pcs/month |
| Payment Terms: | 50% Front Payment | Customizable: | Positive |
|---|---|---|---|
| Capacity: | 800-10000 Cigs / Min | Material: | Treated Stainless Steel |
| Position: | Garniture | Service: | ODM / OEM |
| High Light: | Passim Cigarette Machine Irfz44nl Transistor,Irfz44nl Transistor for Cigarette Machine,Passim Cigarette Machine Parts Transistor |
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Passim Cigarette Machine Spare Parts Kretek Packing Units Switch Irfz44nl Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Silicon Transistor
This was the work of Gordon Teal, an expert in growing crystals of high purity, who had previously worked at Bell Labs.The first working silicon transistor was developed at Bell Labs on January 26, 1954, by Morris Tanenbaum. The first commercial silicon transistor was produced by Texas Instruments in 1954.
Advantages
It is often easier and cheaper to use a standard microcontroller and write a computer program to carry out a control function than to design an equivalent mechanical system to. The transistor's low cost, flexibility, and reliability have made it a ubiquitous device. Transistorized mechatronic circuits have replaced electromechanical devices in controlling appliances and machinery.
IRFZ44NS/LPbF
| Parameter | Min. | |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — | ||
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — | |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
| td(on) | Turn-On Delay Time | — |
| tr | Rise Time | — |
| td(off) | Turn-Off Delay Time | — |
| tf | Fall Time | — |
| Ls | Internal Source Inductance | — |
| Cjss | Input Capacitance | — |
| Coss | Output Capacitance | — |
| Crss | Reverse Transfer Capacitance | — |
| Eas | Single Pulse Avalanche Energy® | — |
Contact Person: Kiana
Tel: +8613824425740
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