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Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK

Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK

  • Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK
  • Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK
  • Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK
Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK
Product Details:
Place of Origin: China
Brand Name: Upperbond
Certification: CE, ISO
Model Number: Maker
Payment & Shipping Terms:
Minimum Order Quantity: 2 pcs
Price: Negotiable
Packaging Details: Carton
Delivery Time: 5-8 days
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 10000 pcs/month
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Detailed Product Description
Color: Grey / Silver Cutting Material: Filter Side
Shipping Terms: EXW,FOB,CFR,CIF Brand: Upperbond
Condition: Brand New Freight: Aramex,DHL,Fedex,TNT,etc
High Light:

Cigarette Machinery Silicon Transistor

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Cigarette Machine Spare Parts Transistor

Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK

 

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

 

 

All-Transistor Car Radio

 

The first "production" all-transistor car radio was developed by Chrysler and Philco corporations and it was announced in the April 28, 1955 edition of the Wall Street Journal. Chrysler had made the all-transistor car radio, Mopar model 914HR, available as an option starting in fall 1955 for its new line of 1956 Chrysler and Imperial cars which first hit the dealership showroom floors on October 21, 1955.

 

Point-Contact Transistor

 

In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947.

 

 

IRFZ44NS/LPbF

 

  Parameter Min.
V(BR)DSS Drain-to-Source Breakdown Voltage 55
△V(BR)DSS 仏 Tj Breakdown Voltage Temp. Coefficient
RDS(on) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage 2.0
gts Forward Transconductance 19
bss Drain-to-Source Leakage Current
loss Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ls Internal Source Inductance
Cjss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Eas Single Pulse Avalanche Energy®

Hauni Max Super Slim Advanced Process Silicon Transistor D2PAK 0

 

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