HK UPPERBOND INDUSTRIAL LIMITED
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| Place of Origin: | China |
| Brand Name: | Upperbond |
| Certification: | CE, ISO |
| Model Number: | Maker |
| Minimum Order Quantity: | 2 pcs |
|---|---|
| Price: | Negotiable |
| Packaging Details: | Carton |
| Delivery Time: | 5-8 days |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 10000 pcs/month |
| Color: | Grey / Silver | Other Models: | Skoda, CME, Sasib |
|---|---|---|---|
| Sample: | Only When Charged | Sea Transportation: | With Larger Orders Only |
| Customizable: | Positive | Port Of Shipment: | Guangzhou, Shanghai |
| High Light: | Tobacco Machinery Silicon Transistor,Tobacco Machinery Field Effect Irfz44ns,Tobacco Processing Machinery Parts |
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Field Effect Irfz44ns Silicon Transistor Tobacco Machinery Spare Parts
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
IRFZ44NS/LPbF
| Parameter | Min. | |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — | ||
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — | |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
| td(on) | Turn-On Delay Time | — |
| tr | Rise Time | — |
| td(off) | Turn-Off Delay Time | — |
| tf | Fall Time | — |
| Ls | Internal Source Inductance | — |
| Cjss | Input Capacitance | — |
| Coss | Output Capacitance | — |
| Crss | Reverse Transfer Capacitance | — |
| Eas | Single Pulse Avalanche Energy® | — |
Point-Contact Transistor
In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947.
All-Transistor Car Radio
The first "production" all-transistor car radio was developed by Chrysler and Philco corporations and it was announced in the April 28, 1955 edition of the Wall Street Journal. Chrysler had made the all-transistor car radio, Mopar model 914HR, available as an option starting in fall 1955 for its new line of 1956 Chrysler and Imperial cars which first hit the dealership showroom floors on October 21, 1955.
Contact Person: Kiana
Tel: +8613824425740
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