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Brand Name: | Upperbond |
Model Number: | Maker |
MOQ: | 2 pcs |
Price: | Negotiable |
Delivery Time: | 5-8 days |
Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Features
• Advanced Process Technology
• Surface Mount (IRFZ44NS)
• Low-profile through-hole (IRFZ44NL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
IRFZ44NS/LPbF
Parameter | Min. | |
V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
△V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
RDS(on) | Static Drain-to-Source On-Resistance | — |
VGS(th) | Gate Threshold Voltage | 2.0 |
gts | Forward Transconductance | 19 |
bss | Drain-to-Source Leakage Current | — |
— | ||
loss | Gate-to-Source Forward Leakage | — |
Gate-to-Source Reverse Leakage | — | |
Qg | Total Gate Charge | — |
Qgs | Gate-to-Source Charge | — |
Qgd | Gate-to-Drain ("Miller") Charge | — |
td(on) | Turn-On Delay Time | — |
tr | Rise Time | — |
td(off) | Turn-Off Delay Time | — |
tf | Fall Time | — |
Ls | Internal Source Inductance | — |
Cjss | Input Capacitance | — |
Coss | Output Capacitance | — |
Crss | Reverse Transfer Capacitance | — |
Eas | Single Pulse Avalanche Energy® | — |
Material
Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices.
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Brand Name: | Upperbond |
Model Number: | Maker |
MOQ: | 2 pcs |
Price: | Negotiable |
Packaging Details: | Carton |
Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Features
• Advanced Process Technology
• Surface Mount (IRFZ44NS)
• Low-profile through-hole (IRFZ44NL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
IRFZ44NS/LPbF
Parameter | Min. | |
V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
△V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
RDS(on) | Static Drain-to-Source On-Resistance | — |
VGS(th) | Gate Threshold Voltage | 2.0 |
gts | Forward Transconductance | 19 |
bss | Drain-to-Source Leakage Current | — |
— | ||
loss | Gate-to-Source Forward Leakage | — |
Gate-to-Source Reverse Leakage | — | |
Qg | Total Gate Charge | — |
Qgs | Gate-to-Source Charge | — |
Qgd | Gate-to-Drain ("Miller") Charge | — |
td(on) | Turn-On Delay Time | — |
tr | Rise Time | — |
td(off) | Turn-Off Delay Time | — |
tf | Fall Time | — |
Ls | Internal Source Inductance | — |
Cjss | Input Capacitance | — |
Coss | Output Capacitance | — |
Crss | Reverse Transfer Capacitance | — |
Eas | Single Pulse Avalanche Energy® | — |
Material
Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices.