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Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

  • Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
  • Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
  • Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
Product Details:
Place of Origin: China
Brand Name: Upperbond
Certification: CE, ISO
Model Number: Maker
Payment & Shipping Terms:
Minimum Order Quantity: 2 pcs
Price: Negotiable
Packaging Details: Carton
Delivery Time: 5-8 days
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 10000 pcs/month
Contact Now
Detailed Product Description
Customizable: Positive Machine Models: Protos, Passim, MK8, MK9,
Sea Transportation: With Larger Orders Only Other Models: Skoda, CME, Sasib
Port Of Shipment: Guangzhou, Shanghai Cigarette Diameter: 5.4mm - 8.0mm
High Light:

Kretek Making Machine Irfz44nl

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Kretek Making Machine Electronic Parts

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Cigarette Machine Electronic Parts

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

 

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

 

1. Source-Drain Ratings and Characteristics

 

  Parameter Typ- Max.
Is Continuous Source Current (Body Diode) 49
Ism Pulsed Source Current (Body Diode)① 160
VsD Diode Forward Voltage 1.3
trr Reverse Recovery Time 63 95
Qrr Reverse Recovery Charge 170 260

 

2. Bipolar Junction Transistors

 

The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.

 

3. High-Frequency Transistor

 

The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl 0

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