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Passim Cigarette Machine Spare Parts
Created with Pixso. Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

Brand Name: Upperbond
Model Number: Maker
MOQ: 2 pcs
Price: Negotiable
Delivery Time: 5-8 days
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Certification:
CE, ISO
Customizable:
Positive
Machine Models:
Protos, Passim, MK8, MK9,
Sea Transportation:
With Larger Orders Only
Other Models:
Skoda, CME, Sasib
Port Of Shipment:
Guangzhou, Shanghai
Cigarette Diameter:
5.4mm - 8.0mm
Packaging Details:
Carton
Supply Ability:
10000 pcs/month
Highlight:

Kretek Making Machine Irfz44nl

,

Kretek Making Machine Electronic Parts

,

Cigarette Machine Electronic Parts

Product Description

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

 

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

 

1. Source-Drain Ratings and Characteristics

 

  Parameter Typ- Max.
Is Continuous Source Current (Body Diode) 49
Ism Pulsed Source Current (Body Diode)① 160
VsD Diode Forward Voltage 1.3
trr Reverse Recovery Time 63 95
Qrr Reverse Recovery Charge 170 260

 

2. Bipolar Junction Transistors

 

The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.

 

3. High-Frequency Transistor

 

The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl 0

Good price online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Passim Cigarette Machine Spare Parts
Created with Pixso. Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

Brand Name: Upperbond
Model Number: Maker
MOQ: 2 pcs
Price: Negotiable
Packaging Details: Carton
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Brand Name:
Upperbond
Certification:
CE, ISO
Model Number:
Maker
Customizable:
Positive
Machine Models:
Protos, Passim, MK8, MK9,
Sea Transportation:
With Larger Orders Only
Other Models:
Skoda, CME, Sasib
Port Of Shipment:
Guangzhou, Shanghai
Cigarette Diameter:
5.4mm - 8.0mm
Minimum Order Quantity:
2 pcs
Price:
Negotiable
Packaging Details:
Carton
Delivery Time:
5-8 days
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Supply Ability:
10000 pcs/month
Highlight:

Kretek Making Machine Irfz44nl

,

Kretek Making Machine Electronic Parts

,

Cigarette Machine Electronic Parts

Product Description

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl

 

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

 

1. Source-Drain Ratings and Characteristics

 

  Parameter Typ- Max.
Is Continuous Source Current (Body Diode) 49
Ism Pulsed Source Current (Body Diode)① 160
VsD Diode Forward Voltage 1.3
trr Reverse Recovery Time 63 95
Qrr Reverse Recovery Charge 170 260

 

2. Bipolar Junction Transistors

 

The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.

 

3. High-Frequency Transistor

 

The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.

Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl 0