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| Brand Name: | Upperbond |
| Model Number: | Maker |
| MOQ: | 800 pcs |
| Price: | Negotiable |
| Delivery Time: | 5-8 days |
| Payment Terms: | T/T, Western Union, , Paypal |
Brand New MK8D Advanced Process Technology Cigarette Maker Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
1. IRFZ44NS/LPbF
| Parameter | Min. | |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — | ||
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — | |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
| td(on) | Turn-On Delay Time | — |
| tr | Rise Time | — |
| td(off) | Turn-Off Delay Time | — |
| tf | Fall Time | — |
| Ls | Internal Source Inductance | — |
| Cjss | Input Capacitance | — |
| Coss | Output Capacitance | — |
| Crss | Reverse Transfer Capacitance | — |
| Eas | Single Pulse Avalanche Energy® | — |
2. Mechanism
A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
3. Material
Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices.
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