Place of Origin: | China |
Brand Name: | Upperbond |
Certification: | CE, ISO |
Model Number: | Maker |
Minimum Order Quantity: | 2 pcs |
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Price: | Negotiable |
Packaging Details: | Carton |
Delivery Time: | 5-8 days |
Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
Supply Ability: | 10000 pcs/month |
Sea Transportation: | With Larger Orders Only | Sample: | Only When Charged |
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Color: | Grey / Silver | Customizable: | Positive |
Other Models: | Skoda, CME, Sasib | Port Of Shipment: | Guangzhou, Shanghai |
High Light: | Cigarette Machine Replacement Parts Transistor,Passim Cigarette Machine Irfz44nl,Passim Cigarette Machine Replacement Parts |
Nano Kretek Electronic Irfz44nl Passim Cigarette Machine Spare Parts
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Advantages
The transistor's low cost, flexibility, and reliability have made it a ubiquitous device. Transistorized mechatronic circuits have replaced electromechanical devices in controlling appliances and machinery. It is often easier and cheaper to use a standard microcontroller and write a computer program to carry out a control function than to design an equivalent mechanical system to control that same function.
Mass Production
In the 1950s, Egyptian engineer Mohamed Atalla investigated the surface properties of silicon semiconductors at Bell Labs, where he proposed a new method of semiconductor device fabrication, coating a silicon wafer with an insulating layer of silicon oxide so that electricity could reliably penetrate to the conducting silicon below, overcoming the surface states that prevented electricity from reaching the semiconducting layer. This is known as surface passivation, a method that became critical to the semiconductor industry as it later made possible the mass-production of silicon integrated circuits.
High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
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