HK UPPERBOND INDUSTRIAL LIMITED
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| Place of Origin: | China |
| Brand Name: | Upperbond |
| Certification: | CE, ISO |
| Model Number: | Maker |
| Minimum Order Quantity: | 800 pcs |
|---|---|
| Price: | Negotiable |
| Packaging Details: | Carton |
| Delivery Time: | 5-8 days |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 10000 pcs/month |
| Brand: | Upperbond | Hardness: | Greatly Enhanced |
|---|---|---|---|
| Cigarette Diameter: | 5.4mm - 8.0mm | Freight: | Aramex,DHL,Fedex,TNT,etc |
| Cutting Material: | Filter Side | Material: | Treated Stainless Steel |
| High Light: | Cigarette Machine Spare Parts Transistor,Passim Cigarette Machine Transistor,Passim Tobacco Machine Transistor |
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Avalanche Rated Transistor Irfz44nl Passim Cigarette Machine Spare Parts
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
| Id @ Tq = 25°C | Continuous Drain Current, Vgs @ 10V | 49 | A |
| lD @ Tc = 100°C | Continuous Drain Current, Vgs @ 10V | 35 | |
| Idm | Pulsed Drain Current ① | 160 | |
| PD @Ta = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.63 | W/°C | |
| Vgs | Gate-to-Source Voltage | ±20 | V |
| Iar | Avalanche Current① | 25 | A |
| Ear | Repetitive Avalanche Energy® | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5.0 | V/ns |
| Tj | Operating Junction and | -55 to + 175 | °C |
Vacuum Tube
Compared with the vacuum tube, transistors are generally smaller and require less power to operate. Certain vacuum tubes have advantages over transistors at very high operating frequencies or high operating voltages. Many types of transistors are made to standardized specifications by multiple manufacturers.
Bipolar Junction Transistors
The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.
Contact Person: Kiana
Tel: +8613824425740
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